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  Datasheet File OCR Text:
 HA1127, HA1127P, HA1127FP
5 Transistor Arrays
Pin Arrangement
503
HA1127, HA1127P, HA1127FP
Absolute Maximum Ratings (Ta = 25C)
Item Collector base voltage Collector substrate voltage Collector emitter voltage Emitter-base voltage Collector current Allowable collector power Allowable collector power Symbol VCBO VCIO VCEO VEBO IC PC* PC Topr Tstg
1
HA1127 20 20 15 5 50 300 750* 625*
2 3
Unit V V V V mA mW mW
Operating temperature Storage temperature
-55 to +125 -55 to +125
C C
Notes: 1. Allowable value per individual transistor. This is the allowable value up to Ta = 25C. Derate at 3 mW/C above that temperature. 2. Allowable value for the whole package. This is the allowable value up to Ta = 35C for the HA1127P. Derate at 8.3 mW/C above that temperature. 3. See page 51.
504
HA1127, HA1127P, HA1127FP
Electrical Characteristics (Ta = 25C)
Item Collector-base breakdown voltage Collector-emitter breakdown voltage Collector-substrate breakdown voltage Emitter-base breakdown voltage Collector cutoff current Collector-emitter saturation voltage Base-emitter voltage DC current amplification ratio Gain-bandwidth product Collector output capacitance Emitter input capacitance Switching time Symbol V(BR)CBO V(BR)CEO V(BR)CIO V(BR)EBO ICBO ICEO VCE(sat) VBE hFE fT Cob Cin ton toff tstg Min 20 15 20 5 -- -- -- -- -- 40 -- -- -- -- -- -- -- Typ -- -- -- -- Max -- -- -- -- Unit V V V V nA A V V V VEE = 3 V MHz pF pF ns ns ns VCE = 3 V, IC = 3 mA VCB = 3 V, IE = 0, f = 1 MHz VCB = 3 V, IE = 0, f = 1 MHz VCC = 10 V, IC = 10IB1 = -10IB2 = 10 mA Test Condition IC = 10 A, IE = 0 IC = 1 mA, R BE = IC = 10 A, IE = 0, IB = 0 IE = 10 A, IC = 0 VCB = 10 V, IE = 0 VCE = 10 V, R BE = IC = 10 mA, IB = 1 mA VCE = 3 V IC = 1 mA IC = 10 mA IC = 1 mA IC = 10 mA
0.002 40 -- 0.17 0.72 0.80 140 120 460 1.7 2.0 35 130 75 0.5 -- -- -- -- -- -- -- -- -- -- --
505
HA1127, HA1127P, HA1127FP
506
HA1127, HA1127P, HA1127FP
507
HA1127, HA1127P, HA1127FP
508
HA1127, HA1127P, HA1127FP
509


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